Archive for April 2006

Axiology, Economy, Technology


Axiology, Economy, TechnologyWearable response to economic and axiological problems,
Many people would agree that the technological advances used to read the text on this screen and the way in which computers interact with one another are tools for achieving certain social ends; we sense that certain ends which are still distant, tacitly unspeakable, and for which a solution is still more or less ruled out (elimination of war, terrorism, illiteracy and endemic poverty…) will be sorted out thanks to these marvellous communication and data processing tools.

Nerve/Chip Hybrid


Nervy chip may open window into brain
Peter Weiss
In a feat that blurs the lines between science fiction and reality, researchers in Germany have combined living brain cells and semiconductor electronics in a single circuit.
Plastic posts on a microchip corral a snail neuron above a transistor.Fromherz
The new microdevice, which uses snail neurons because they are conveniently large, represents a step toward more-complex hybrid circuits, says Peter Fromherz, leader of the work. Such circuits would include up to hundreds of neurons and may enable neuroscientists to directly probe the physiological processes of memory and learning, he says. ..
Nervy chip may open window into brain
Peter Weiss
In a feat that blurs the lines between science fiction and reality, researchers in Germany have combined living brain cells and semiconductor electronics in a single circuit.
The new microdevice, which uses snail neurons because they are conveniently large, represents a step toward more-complex hybrid circuits, says Peter Fromherz, leader of the work. Such circuits would include up to hundreds of neurons and may enable neuroscientists to directly probe the physiological processes of memory and learning, he says.
“We want to make a biological neural network . . . and then supervise it, record [from] it, and look at what’s going on,” says Fromherz.
Finding ways of directly linking semiconductor components and cells also may further medical and technological applications, he notes. Teams in other labs are trying to meld brain tissue with microchips to make implants that can restore sight and computers that exploit nerve cells’ information-processing abilities.
But those teams connect cells to circuits by impaling the cells with needle-like electrodes, Fromherz notes. That’s how scientists recently commandeered a slice of a lamprey’s brain to control a light-sensitive robot (SN: 11/11/00, p. 309).
Fromherz and Günther Zeck, both of the Max Planck Institute for Biochemistry in Munich, describe their snail-neuron-based circuit in the Aug. 28 Proceedings of the National Academy of Sciences.
To make their circuit, the duo patterned transistors onto a silicon wafer, placed snail neurons onto the surface, and then immersed the device in a cell-sustaining broth. The team also has begun experimenting with rat neurons. While those cells are smaller and harder to work with, they’re more like human neurons than snail neurons are.
References:
Zeck, G., and P. Fromherz. 2001. Noninvasive neuroelectronic interfacing with synaptically connected snail neurons immobilized on a semiconductor chip. Proceedings of the National Academy of Sciences 98(Aug. 28):10457-10462. Abstract available at http://www.pnas.org/cgi/content/abstract/98/18/10457.
Further Readings:
Perkins, S. 2000. Lamprey cyborg sees the light and responds. Science News 158(Nov. 11):309. Available at http://www.sciencenews.org/20001111/fob4.asp.
Sources:
Peter FromherzDepartment of Membrane and NeurophysicsMax Planck Institute for BiochemistryD-82152 Martinsried, MunichGermany
Gunther ZeckDepartment of Membrane and NeurophysicsMax Planck Institute for BiochemistryD-82152 Martinsried, MunichGermany

Biomorphic Analog Pulse-Coupled Neural Circuits

These circuits are potentially useful for invariant pattern recognition.
NASA’s Jet Propulsion Laboratory, Pasadena, California
Analog electronic circuits that operate with pulsed input and output signals are undergoing development. The pulsing behavior of these circuits is modeled after a similar behavior, called “spiking,” that occurs in biological neural networks. In these circuits, the pulse times and/or the pulse-repetition rates can convey information. These circuits are intended especially for use in high-speed artificial neural networks, which, like the brains of animals that have vision, would process image data to effect invariant pattern recognition. (As used here, “invariant”signifies that the ability to recognize patterns would not be adversely affected by such effects as translation, rotation, distortion, changes in scale, or changes in brightness.)
Figure 1 depicts an example of input/output behavior according to one mathematical model of a biomorphic spiking neuron. Starting from the beginning of a pulse cycle, a membrane potential rises at rate that decays exponentially until the potential passes a time-varying threshold, at which point the neuron sends a spike along its axon. At the instant of the spike, the membrane potential returns to a resting level from which the cycle starts anew. If the threshold, the resting potential, or the rate of rise of the membrane potential is modulated, then the pulse-repetition rate (also called the “spiking frequency” or the “firing rate”) of the neuron is changed.
By locally connecting neurons like this one into an array in which the axons of neighbors would transmit their spike trains via synapto-dendritic connections that would modulate the thresholds, one could construct a complex processing network. In a computational simulation, such a network has been shown to be capable of invariant mapping of binary patterns.
The invariance of the mapping is a result of encoding images in time rather than space. In particular, if the same image is fed as input to a different set of pixels but the same spatial relationships are maintained among parts of the image, the temporal representation of the image remains the same and the mapping is invariant to translation. Invariance with respect to brightness is achieved partly by recognizing that greater brightness is represented simply by a uniform increase in the average firing rates of all affected neurons.
The upper part of Figure 2 depicts a developmental spiking-neuron circuit. The clock voltage source (Vclk) pumps charge through a subthreshold biased transistor (M1) onto the gate capacitance of transistor M2, the gate potential of which represents the membrane potential. The current source constituted by the clock and M1 is intentionally made fairly poor (i.e., is made to have low resistance) in order to obtain a nonlinear buildup of membrane potential. When the membrane potential becomes high enough to pull M3 out of its linear current-vs.-voltage region, the voltage at the swing node rapidly decreases as M2 pulls the node toward ground. The low voltage on the swing node then triggers the inverter formed with M4 and M5 to go high, and the inverter potential is digitally buffered to the output terminal. The clocked switching transistor M7 latches the voltage output on the noncharging portion of the cycle of the current pump at M1. M8 and M9 are sized to constitute an inverter that triggers at a relatively high dc potential to insure an adequate spike amplitude before the discharge transistor M6 is activated. When M6 is switched on, all charge at the membrane is drained to ground (zero potential) or, alternatively, to a source of nonzero resting potential connected to the source terminal of M6. When the membrane potential falls, M2 shuts down and the swing node is pulled high again as M3 returns to its linear region. This change in the swing node returns the output to low, ending the spike and switching off the discharge transistor at M6.
The lower part of Figure 2 shows a synapto-dendritic input circuit connected to the swing node of a spiking neuron. In a locally connected network, there could be eight input circuits like this one for coupling the outputs from eight nearest-neighbor neurons as inputs to the affected neuron. Transistor Ms1 sets the gain of the coupling, while transistor Ms2 controls the timing. Essentially, the spike from a neighboring neuron injects charge onto the gate of Ms3 through Ms1. This charge then slowly leaks away via Ms2 to produce a decaying exponential current response through Ms3. This current modulates the threshold of the spiking neuron by pulling M3 closer to saturation, thereby enabling a decreased membrane potential to trigger a spike.

Figure 1. The Interval Between Spikes and the Buildup of Membrane Potential can be modulated by modulating the threshold potential.
Figure 2. These Analog Neural Circuits are designed to exhibit spiking behavior that approximates that of figure 1.

This work was done by Tyson Thomas of Caltech for NASA’s Jet Propulsion Laboratory. For further information, access the Technical Support Package (TSP) free on-line at www.nasatech.com under the Electronic Components and Systems category.
NPO-20818

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RAS: in-situ analysis in MOVPE

An analytical technique to be used in MOVPE must be applicable at pressures from 20 hPa up to atmospheric pressure. This rules out the standard methods of electron diffraction (LEED, RHEED) used in MBE, since they only function in ultrahigh vacuum (approx. 10-10hPa).
Instead, optical methods suggest themselves. The methods of reflectometry are particularly suited for the requirements of MOVPE since, on the one hand, information can be obtained from the bulk such as layer thickness and composition. On the other hand, minor modifications also make processes on the surface accessible whose knowledge is necessary for the fundamental understanding of the growth processes.
The reflectivity of a sample depends on its dielectric properties which, in turn, depend on the type of atoms and their arrangement with respect to each other. In this way, on the one hand, material-specific data can be obtained, such as the composition of a layer. On the other hand, the dielectricity is also temperature-dependent so that e.g. the exact growth temperature can be directly measured in situ. If heterostructures are deposited, the layer thickness and growth rate can be determined from the interface effects (Fabry-Perot oscillations).
Reflective anisotropy spectroscopy (RAS) provides information from the dependence of the reflected light on the polarization. To this end, particular crystal properties of the III-V semiconductors are utilized: The classical III-V semiconductors are known to crystallize in the zinc blende structure, a cubic structure. In these semiconductors, the reflectivity of the bulk is isotropic, i.e. the same everywhere in the material, and not dependent on polarization. This does not apply to the surface of the crystal because reconstructions are formed here as a result of symmetry breaking


Consequently, the surface reflects polarized light anisotropically. The spectra thus generated are also specific so that the surface reconstruction can be determined from them. This surface reconstruction or its modification during epitaxy permits conclusions to be drawn concerning the processes taking place during layer growth. This is important for the understanding of MOVPE and it also enables process control since it is thus possible to supervise the quality of the surface or dopings.
A RAS spectrum consists of a number of normalized intensity differences as a function of the wavelength and energy of the reflected light. The reflectivity of two crystal directions perpendicular to each other  is measured and the difference in intensities is divided by the intensity averaged over the two directions.

ISG1-IT


The section Ion Technology (ISG1-IT) is part of the Institute ISG1 “Semiconductor Thin Films and Devices”. ISG1 is one of four institutes, which form the department ISG, working on the physics of thin films and interfaces. ISG1-IT is a Center of Competence for the application of ion beam techniques especially in the field of thin film modification and characterization. It is a founding member of the regional nanoelectronics collaborative research center “CNI – The Center for Nanoelectronic Systems in Information Technology”. ISG1- IT is focussed on the topics:
Silicon based materials e.g. strained silicon, silicides
High-k dielectrics,
Ferroelectrics for memories and
Innovative Si based NanoMOSFETs, e.g. Schottky barrier MOSFETs.
ISG1-IT operates four different accelerators with very specific performance and possibilities. In addition, a number of thin film deposition setups, including MBE, CVD, PLD and sputter machines are part of our equipment, which is part of the extended and powerful installations of the entire department. This allows us to epitaxially grow or deposit a wide range of different thin films and to lithographically structure, modify and characterize planar structures or nanoelectronic devices.

Institute 1: Semiconductor Thin Films and Devices

500 nm mesa of a resonant tunneling transistor for digital applications and single electron tunneling
Scientific Program
Ion Technology
Semiconductor Films and Nanostructures
The institute investigates fundamental problems in semiconductor physics and in semiconductor materials.
In the device development alternative concepts are explored and property limits are explored.
The epitaxy of classical III/V compounds and of GaN is a broad activity. Electronic and optical properties of the grown layers are measured.
With the grown semiconductor layer systems devices are developed to explore e. g. the maximum transistor frequency and the minimum transistor cross section.
Resonant tunnel transistors are investigated to study the quantum mechanical limit in the smallest electronic devices.
With the standard semiconductor silicon vertical MOSFETs of 30 nm gate length are developed following different concepts.
Hybrid devices combining superconductor and semiconductor device physics are studied to get to devices with unusual properties.